14nm EUV Process Node, 7200 Mbps Speeds & 768 GB Capacities
Samsung has officially begun mass production of its next-generation DDR5 memory which will be made on the company’s 14nm EUV process node. The memory will be aimed at HPC & AI servers, offering over twice the performance of DDR4 memory. Samsung’s DDR5 Memory Enters Mass Production: 14nm EUV Process Node, 7200 Mbps Speeds & 768 …
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